| PART |
Description |
Maker |
| RJK0456DPB RJK0456DPB13 RJK0456DPB-00-J5 |
40V, 50A, 3.2m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| FDS4080N7 |
RELAY, 4PCO, 12VDC; Configuration, contact:4PCO; Voltage, contact DC max:30V; Voltage, coil DC nom:12V; Current, contact AC max:5A; Current, contact DC max:5A; Voltage, contact AC max:250V; Resistance, coil:160R; Material, RoHS Compliant: Yes
40V N-Channel FLMP PowerTrench MOSFET
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| X9316W X9316WP X9316WP3 X9316WPI X9316WPI3 X9316WP |
E 2 POT?Nonvolatile Digital Potentiometer
E 2 POT?/a> Nonvolatile Digital Potentiometer
E 2 POT?/a> Nonvolatile Digital Potentiometer
E 2 POT Nonvolatile Digital Potentiometer
E 2 POT⑩ Nonvolatile Digital Potentiometer
BRIDGE RECTIFIER, 1.2A 40VBRIDGE RECTIFIER, 1.2A 40V; Voltage, Vrrm:120V; Voltage, input RMS:40V; Current, output max:2.5A; Phases, No. of:1; Current, Ifs max:80A; Length / Height, external:12mm; Depth, external:5mm; Width, 首页2锅⑩非易失数字电位器
E2POT nonvolatile digital potentiometer
|
XICOR[Xicor Inc.]
NXP Semiconductors N.V.
|
| IRF7471 |
Power MOSFET(Vdss=40V, Rds(on)max=13mohm, Id=10A)
|
IRF[International Rectifier]
|
| PA50 |
Amplifiers - Apex Linear Op-Amp, 100V, 40A OP-AMP, 10000 uV OFFSET-MAX, 3 MHz BAND WIDTH, MDFM12
|
Cirrus Logic, Inc.
|
| AMS5010KT AMS5010JT AMS5010NT AMS5010LN AMS5010HN |
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:40A; On-Resistance, Rds(on):0.014ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252; Leaded Process Compatible:No 1.2V的电压基
1.2V VOLTAGE REFERENCE 1.2V的电压基
|
Advanced Monolithic Systems, Inc.
ADMOS[Advanced Monolithic Systems]
|
| STP3015L STB3015 STB3015L 6057 |
From old datasheet system
N - CHANNEL 30V - 0.013 - 40A - D 2 PAK/TO-220 STripFET TM POWER MOSFET
N - CHANNEL 30V - 0.013 ohm - 40A - D2PAK/TO-220 STripFETO POWER MOSFET -通道30V 0.013欧姆- 40A D2PAK/TO-220 STripFETO的功率MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| RJF0618JPE |
60V-40A Silicon N Channel Thermal FET Power Switching
|
Renesas Electronics Corporation
|
| STR-BS6301 STRS6301 STR-S6301 |
Low Leakage Diodes; Package: PG-SOT23-3; Configuration: Dual; VR (max): 80.0 V; IF (max): 200.0 mA; IR (max): 5.0 nA; trr (max): 1,500.0 ns;
SWITCHING REGULATOR HYRRTD lC
|
Sanken Electric Co.,Ltd.
|
| CDBUR40 |
Small Signal Schottky Diodes, V-RRM=40V, V-R=40V, I-O=200mA
|
Comchip Technology
|
